ion implantation वाक्य
उदाहरण वाक्य
मोबाइल
- The company is the second largest maker of ion implantation devices.
- Typically, the concentration is adjusted by ion implantation method.
- See ion implantation, surface diffusion, and solid sources footnote.
- These ion sources are particularly used in ion implantation or in focused ion beam instruments.
- They are used for ion implantation and for space propulsion ( Hall effect thrusters ).
- Halverson can ramble on for 15 minutes describing the processes of etching, doping and ion implantation.
- A common method of fabricating multi-threshold CMOS involves simply adding additional photolithography and ion implantation steps.
- The Therma-Probe was used primarily for monitoring of the ion implantation process in silicon semiconductor manufacturing.
- This is normally performed using ion implantation.
- All varieties of ion implantation beamline designs contain certain general groups of functional components ( see image ).
- Device technology : integrated circuit fabrication process, oxidation, diffusion, ion implantation, photolithography, n-tub, p-tub and twin-tub CMOS process.
- Today, fast thyristors are more usually made by electron or proton irradiation of the silicon, or by ion implantation.
- These defects can be caused by manufacturing processes, such as heavy ion implantation, or by unintentional side-effects such as surface contamination.
- "' Varian Semiconductor Equipment Associates, Inc . "'was a supplier of ion implantation equipment used in the fabrication of semiconductor chips.
- It is also revealed that his doctoral dissertation is about the modeling of ion implantation induced transient deactivation disjunction activities in Boron.
- Silicide contacts can also be deposited by direct sputtering of the compound or by ion implantation of the transition metal followed by annealing.
- Ion implantation is one of the methods used to transform physical properties of polymers and to improve their electrical, optical, and mechanical performance.
- Ion implantation is then completed, with ions of the chosen dopant type penetrating the gate oxide in areas where no photoresist is present.
- Ion implantation facilities offer insufficient irradiation volume ( maximum values of a few hundreds �m layer thickness ) for standardized mechanical property tests.
- Mostek had the ion implantation equipment needed to create a SRAM called the " 2102 " ( using more than 6000 transistors ).
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